The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Apr. 18, 2002
Yasuhiko Ueda, Minato-ku, JP;
Other;
Abstract
For selectively removing a silicon nitride film formed on a bottom of a contact hole or the like in a semiconductor device, plasma etching is performed using a process gas supplied therefor which is comprised of a first fluorine compound including a carbon atom-carbon atom bond [for example, octafluorocyclobutane (C F ), hexafluorobutadiene (C F ), octafluorocyclopentene (C F )], and a second fluorine compound including at least one hydrogen atom and a single carbon atom in one molecule (for example, fluoromethane (CH F), difluoromethane (CH F ), trifluoromethane (CHF )]. According to this method, the silicon nitride film on the bottom can be selectively removed without removing a silicon nitride film formed on a side wall of the contact hole and the like.