The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Feb. 13, 2002
Applicant:
Inventor:
Tetsuya Taguwa, Tokyo, JP;
Assignee:
NEC Electronics Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/4763 ;
U.S. Cl.
CPC ...
H01L 2/4763 ;
Abstract
A semiconductor integrated circuit device is implemented by circuit components and a multi-layered wiring structure, and titanium nitride is used for a part of the integrated circuit such as a conductive plug, an accumulating electrode and a conductive line, wherein the titanium nitride layer is laminated on a titanium silicide layer so as to absorb thermal stress due to the titanium nitride layer.
Taguwa, Tetsuya. (2003). Semiconductor device having interconnection implemented by refractory metal nitride layer and refractory metal silicide layer and process of fabrication thereof (U.S. Patent No. 6569759). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6569759
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile