The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Jul. 28, 1999
Kazumi Sugai, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A method for forming wiring composed of copper materials by using a CVD method by which the number of processes is reduced and copper metal wiring is effectively formed. After a first copper thin film having a film thickness adjusted so as not to virtually cause bumps and dips attributable to crystal particles on a surface of the film is formed by using the CVD method, with a barrier metal film put between the first copper thin film and the insulating film, on the insulating film covering the semiconductor substrate and containing the connecting trench, reflow processing is performed to make flowing the surface of the copper thin film. Then, after the second copper thin film having a sufficient film thickness to impart a wiring function obtained in a short time by using the sputtering method is formed on the first copper thin film, planarization is carried out on the surface by the CMP method to form copper wiring.