The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Jan. 02, 2001
Young Seok Kim, Kyoungki-do, KR;
Jae Goan Jeong, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
The present invention discloses a method for forming a device trench isolation film for a semiconductor device having impurity regions at the sidewalls of the trench. The impurity regions increase the threshold voltage of the transistor and suppress an inverse narrow width effects. In addition, the method prevents or suppresses the phenomenon wherein an impurity in a channel region moves to the trench and lowers the threshold voltage of the transistor, decreases the leakage current, and overcomes a hump phenomenon by turning on a parasitic transistor at the sidewalls with the transistor in the active region. As a result, the electrical properties and reliability of the resulting semiconductor device are improved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile