The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Jan. 28, 1999
Masafumi Kunii, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Threshold voltage (Vth) control in thin-film transistors is facilitated. The thin-film transistor has a laminate structure comprising a thin-film polycrystalline semiconductor, a gate oxide film as formed adjacent to one surface of the semiconductor film, and a gate electrode as laminated on the thin-film polycrystalline semiconductor via the gate oxide film. The method for fabricating the thin-film transistor comprises an implantation step of selectively implanting a dopant in the thin-film semiconductor to form a source region and a drain region of the thin-film transistor, and a rapid thermal annealing (RTA) step of activating the implanted dopant through controlled RTA for Vth control in the thin-film transistor. The RTA step comprises gradually heating the insulating substrate, then exposing the thin-film semiconductor to ultraviolet rays for rapidly heating it, and thereafter gradually cooling it.