The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Jan. 19, 2000
Zoran Krivokapic, Santa Clara, CA (US);
William D. Heavlin, El Granada, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
When Tilted Channel Implant (TCI) is performed on transistor precursor structures having an etch-defined gate length (L ) and a trim-defined sidewall thickness (S ), mass production deviations may cause errors between targeted values for these critical dimensions (CD's) and the correspondingly measured CD's. These deviations may respectively cause shifts in the lateral placement of TCI dopants or in the depth of implant of the TCI dopants, thereby tending to cause variation in final device characteristics. Countering adjustments to TCI dosage and TCI energy are automatically made in accordance with the invention. These countering adjustments in the TCI process enable expansion of tolerance ranges in pre-TCI production steps, thereby increase manufacturing yield.