The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2003

Filed:

Mar. 29, 2001
Applicant:
Inventors:

Seigo Furudate, Yokohama, JP;

Eiji Tsumura, Yokohama, JP;

Sosaku Sawada, Yokohama, JP;

Hiroshi Hara, Yokohama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/00 ;
U.S. Cl.
CPC ...
H01S 3/00 ;
Abstract

Provided are a source follower circuit having a current source having its improved current characteristics, laser driving apparatus, semiconductor laser apparatus, current-voltage conversion circuit, and light receiving circuit. Each of the laser driving apparatus, semiconductor laser apparatus, current-voltage conversion circuit, and light receiving circuit comprises the source follower circuit. The source follower circuit comprises a source follower stage and a bias stage . The source follower stage has III-V compound semiconductor transistors and . The bias stage has a first node for providing a first bias voltage and a second node for providing a second biasing voltage different from the first biasing voltage. The gate of transistor is coupled to input and a source thereof is coupled to output . The gate of transistor is connected to the second node . The gate of transistor is connected to the first node . The transistor is arranged between the source of the transistor and the drain of the transistor


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