The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2003

Filed:

Mar. 22, 2002
Applicant:
Inventors:

Yuichi Einaga, Kawasaki, JP;

Yasushi Kasa, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/600 ;
U.S. Cl.
CPC ...
G11C 1/600 ;
Abstract

Nonvolatile semiconductor memory has a core-side cell array having word lines, bit lines and memory cells; a reference-side cell array having word lines, bit line, and reference cell; and, a sense amplifier which compares a core-side input voltage corresponding to a bit line current in the core-side cell array, and a reference-side input voltage corresponding to the bit-line current in the reference-side cell array. The core-side decoder-driver and reference-side decoder-driver drive the core-side and reference-side word lines to the power supply voltage at a first time at the end of the address change detection pulse, and, at a second time a prescribed time after the end of the address change detection pulse, drive the core-side and reference-side word lines to a boost voltage level higher than the power supply voltage. The sense amplifier begins comparison of the core-side and the reference-side input voltages after the second time.


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