The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
May. 24, 2001
Arizona Board of Regents, Phoenix, AZ (US);
Abstract
A compound semiconductor device is provided that includes a substrate and an active region disposed above the substrate. The active region includes at least two different pseudomorphic layers, the first layer having the form In Ga P As Sb , and the second layer having the form In Ga P As Sb . The first layer includes at least In, Ga, and As, and the second layer includes at least Ga, As, and Sb. It is preferable for the substrate to be GaAs or Al Ga As (0<p<1), or to have a lattice constant close to or equal to that of GaA For the first layer, it is preferable if x is between 0.05 and 0.7, y is between 0 and 0,35, z is between 0.45 and 1, and 1−y−z is between 0 and 0.25. For the second layer, it is preferable if q is between 0 and 0.25 and 1−r−s is between 0.25 and 1.