The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Apr. 15, 2002
Atsushi Maeda, Tokyo, JP;
Kiyohiko Sakakibara, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device having a solid-state image sensor is provided in which the leakage current is less likely to occur. The surface portion of a P-type semiconductor substrate ( ) is susceptible to various defects, which are likely to cause the leakage current. Accordingly an N-type buried channel layer ( ) is provided. While the potential is high in the vicinity of the surface of the P-type semiconductor substrate ( ) where defects are present, the potential is minimized in the vicinity of the PN junction plane formed by the N-type buried channel layer ( ) and the P-type semiconductor substrate ( ). Accordingly, when a transfer switch (M ) is operated, a channel is formed in the vicinity of this PN junction plane, so that a charge stored in an N-type source region ( ) of the photodiode (PD) can be transferred to an N-type drain region ( ) without suffering leakage current.