The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Sep. 25, 2001
Applicant:
Inventor:
Masataka Ito, Kanagawa, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
The HF defect density in an SOI is reduced. An SOI having a thickness of 200 nm or less is annealed in an inert atmosphere at a temperature between the eutectic temperature (e.g., 966° C.) of a semiconductor metal compound (e.g., nickel silicide) formed from a metal and the semiconductor material of the crystal semiconductor of the SOI (inclusive) and the melting point of the semiconductor material (inclusive).
Quick Actions:
Ito, Masataka. (2003). Soi annealing method and soi manufacturing method (U.S. Patent No. 6566255). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6566255
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile