The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Dec. 27, 2001
Applicant:
Inventors:
Harpreet K. Sachar, Sunnyvale, CA (US);
Unsoon Kim, Santa Clara, CA (US);
Mark S. Chang, Los Altos, CA (US);
Chih Y. Yang, San Jose, CA (US);
Jayendra D. Bhakta, Sunnyvale, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L 2/176 ;
U.S. Cl.
CPC ...
H03L 2/176 ;
Abstract
A method for performing trench isolation during semiconductor device fabrication is disclosed. The method includes patterning a hard mask to define active areas and isolations areas on a substrate, and forming spacers along edges of the hard mask. Trenches are then formed in the substrate using the spacers as a mask, thereby increasing the width of the substrate under the active areas and increasing Weff for the device.