The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Oct. 11, 1996
Yukio Maki, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A manufacturing process for a semiconductor device including a semiconductor memory region and a peripheral circuit region including bipolar transistors, in which a plurality of bipolar transistors with characteristics different from each other are effectively manufactured according to design requirements while minimizing the number of manufacturing steps. In manufacturing the semiconductor memory region and the bipolar transistors in the peripheral circuit region, a plurality of holes for forming the bipolar transistors are provided in the peripheral circuit region in correspondence to a plurality of steps for forming holes for interlayer insulating films in the semiconductor memory region, whereby the bipolar transistors with characteristics different from each other are formed in the holes of the peripheral region.