The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
May. 15, 2002
Barbara Haselden, Cupertino, CA (US);
Chia-Shun Hsiao, Cupertino, CA (US);
Chunchieh Huang, San Jose, CA (US);
Jin-Ho Kim, San Jose, CA (US);
Chung Wai Leung, Milpitas, CA (US);
Kuei-Chang Tsai, San Jose, CA (US);
Mosel Vitelic, Inc., Hsin Chu, TW;
Abstract
In a nonvolatile memory, a floating gate ( ) is covered with ONO ( ), and a control gate polysilicon layer ( ) is formed on the ONO. After the control gate is patterned, the control gate sidewalls are oxidized to form a protective layer ( ) of silicon dioxide. This oxide protects the control gate polysilicon during a subsequent etch of the silicon nitride portion ( ) of the ONO. Therefore, the silicon nitride can be removed with an isotropic etch. A potential damage to the substrate isolation dielectric ( ) is therefore reduced. Other embodiments are also provided.