The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Jul. 02, 2001
Applicant:
Inventors:
Kwang Chul Joo, Kyoungki-do, KR;
Hai Won Kim, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor, Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1242 ;
U.S. Cl.
CPC ...
H01L 2/1242 ;
Abstract
The present invention discloses a method for manufacturing a gate for semiconductor memory devices in which a TaON thin film is used as a gate dielectric film. The disclosed present invention comprises steps of forming a nitride thin film on a semiconductor substrate; forming an amorphous TaON thin film over the nitride films; subjecting the amorphous TaON thin film to effect a crystallization thereof; and forming a polysilicon film as an upper electrode over the crystallized TaON thin film.
Joo, Kwang. (2003). Method for manufacturing gate in semiconductor device (U.S. Patent No. 6566189). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6566189
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile