The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Sep. 06, 2000
Applicant:
Inventors:
Kazushige Takechi, Tokyo, JP;
Naoto Hirano, Tokyo, JP;
Assignee:
Nec Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/184 ;
Abstract
This invention provides an inverted staggered type thin-film transistor element wherein the n-doped amorphous silicon film ( ) present in the region where the amorphous silicon film ( ) does not overlap with the source-drain electrodes ( ) is modified into an insulating film ( ) by exposure to a plasma containing ions or radicals of oxygen and/or nitrogen, so that the undesired n-doped amorphous silicon film above a channel region need not be removed and the amorphous silicon film can be made thinner. Moreover, the aperture ratio of a liquid crystal display can be enhanced by utilizing such elements.