The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2003

Filed:

May. 24, 2002
Applicant:
Inventors:

Yao-Ting Wang, Atherton, CA (US);

Yagyensh C. Pati, Woodside, CA (US);

Assignee:

Numerical Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G06F 1/750 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G06F 1/750 ;
Abstract

A two mask process for small dimension features on an integrated circuit improves manufacturability and design tolerance. The first mask is an opaque-field phase shift mask and the second mask is a single phase structure mask. A phase shift window is aligned with the opaque field using a phase shift overlap area on the opaque field. The phase shift mask primarily defines regions requiring phase shifting. The single phase structure mask primarily defines regions not requiring phase shifting. The single phase structure mask also prevents the erasure of the phase shifting regions and prevents the creation of undesirable artifact regions that would otherwise be created by the phase shift mask.


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