The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Apr. 12, 2001
Junichi Horie, Hitachinaka, JP;
Atsushi Miyazaki, Mito, JP;
Satoshi Shimada, Hitachi, JP;
Akihiko Saitou, Kawasaki, JP;
Yasuo Onose, Tokai-mura, JP;
Norio Ichikawa, Mito, JP;
Keiji Hanzawa, Mito, JP;
Other;
Abstract
A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate , an active capacitor whose capacitance varies as the surrounding pressure varies, a reference capacitor whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors and detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode of said reference capacitor is formed on the semiconductor substrate with a dielectric therebetween.