The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2003

Filed:

Aug. 04, 2000
Applicant:
Inventors:

Noriyuki Kimura, Chiba, JP;

Kiyoaki Kadoi, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/940 ;
Abstract

In a semiconductor device, a metal wiring film and a lower-layer film under a bump electrode are patterned to form irregular steps under the bump electrode. With the formation of the irregular steps, the contact area of the bump electrode with a semiconductor substrate is increased to improve the mechanical strength. The lower-layer film is formed of a polysilicon film, an insulating film or a protective film such as a silicon nitride film, or Al—Si—Cu, Al—Si, Al—Cu or Cu. A portion where irregular steps are formed is in a region under the bump except for a protective film opening portion.


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