The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2003

Filed:

Aug. 03, 2001
Applicant:
Inventor:

Masafumi Kunii, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/904 ;
U.S. Cl.
CPC ...
H01L 2/904 ;
Abstract

A thin-film semiconductor device which has a pixel array section and a peripheral circuit section arranged around it, said pixel array section containing pixel electrodes and thin-film transistors for pixels which switch the pixel electrodes, said peripheral circuit section containing driving circuits each having thin-film transistors for circuits which drive the thin-film transistors for pixels, said each thin-film transistor having the laminate structure having a semiconductor thin film, a gate electrode, and a gate insulating film interposed between them, and said semiconductor thin film having a channel region inside the end of the gate electrode, a lightly doped region outside said channel region, a heavily doped region outside said lightly doped region, and a concentration boundary which separates said lightly doped region and heavily doped region from each other, wherein said concentration boundary measured from the end of said gate electrode is positioned more inside in said thin-film transistor for circuits than in said thin-film transistor for pixels.


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