The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
May. 18, 2000
Shohei Suzuki, Tokyo, JP;
Nikon Corporation, Tokyo, JP;
Abstract
Apparatus and methods are disclosed for charged-particle-beam (CPB) microlithography using a hollow beam. The hollow beam is produced by passing the charged particle beam through a scattering aperture. However, passage of the beam is performed in a manner by which the scattering aperture is prevented from overheating. Also, the scattering aperture can be made from a material that is micro-machined easily. The scattering aperture can be configured as a beam-scattering aperture plate defining voids that collectively define an annular aperture. The scattering aperture is situated at a beam-crossover plane. As the charged particle beam strikes the scattering aperture, particles pass readily through the voids as a “transmitted beam.” Particles incident on the scattering aperture plate are scattered and become a “scattered beam.” The transmitted beam passes readily through a downstream blocking aperture, whereas most particles of the scattered beam are absorbed by the blocking aperture.