The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Oct. 23, 2000
Kazushige Umetsu, Chino, JP;
Jun Amako, Shiojiri, JP;
Shinichi Yotsuya, Chino, JP;
Katsuji Arakawa, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A method for processing a work in which a processed hole with a high aspect ratio is formed by laser machining. Silicon oxide films ( ) are formed as protective films on front and rear surfaces, respectively, of a silicon substrate ( ). The silicon substrate ( ) is irradiated with a laser light through the protective films ( ) to thereby perform a perforating process. Alternatively, the silicon substrate ( ) is irradiated with a circularly or randomly polarized laser light. Hence, a processed hole with a high aspect ratio can be obtained. Moreover, the processed hole can be shaped straightly, so that processing accuracy is improved.