The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2003

Filed:

Nov. 27, 2001
Applicant:
Inventors:

Shin Sugawara, Yokaichi, JP;

Takeshi Kyoda, Yokaichi, JP;

Nobuyuki Kitahara, Yokaichi, JP;

Hisao Arimune, Yokaichi, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1052 ; H01L 3/10256 ; H01L 3/1042 ;
U.S. Cl.
CPC ...
H01L 3/1052 ; H01L 3/10256 ; H01L 3/1042 ;
Abstract

This photoelectric conversion device comprises a lower electrode, numerous p-type crystalline semiconductor particles deposited thereon, an insulator formed among the crystalline semiconductor particles, and a n-type semiconductor layer formed on the side of the upper portions of the crystalline semiconductor particles. The insulator is formed of a translucent material, and the surface of the lower electrode has been subjected to roughening treatment. Roughening the surface of the lower electrode allows light incident on the surface of the lower electrode to be scattered and directed to the crystalline semiconductor particles so that the photoelectric conversion efficiency is improved.


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