The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Jan. 04, 2001
Yasuhiko Ueda, Tokyo, JP;
NEC Electronics Corporation, Kawasaki, JP;
Abstract
There is provided a dry etching method for forming an insulating layer of SiO or the like in a desired shape with a substantially infinite selection property with respect to Si N used as an etching stopper. As an etching gas a gas (HI, or a gas having a constitution of C H I ) containing iodine in a molecule is added. Here, a mixing ratio (I/C) of iodine to carbon in the etching gas is 0.3≦(I/C)≦1.5. Alternatively, instead of the iodine-containing gas the gas containing chlorine or bromine as the same halogen element is used. Since iodine, chlorine, or bromine contained in the etching gas generates a low vapor pressure material on Si N , Si N etching is completely prohibited. Since no low vapor pressure material is generated on SiO or SiOF as a material to be etched, a high etching rate can be obtained.