The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Jan. 10, 2002
Jong-Ryol Ryu, Kyunggi-do, KR;
Jung-Woo Park, Seoul, KR;
Jung-Min Ha, Seoul, KR;
Si-Young Choi, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate. The window exposes a predetermined region of the semiconductor substrate. The substrate having the window is cleaned, thereby removing any native oxide layer on the exposed substrate. The cleaned substrate is oxidized. Accordingly, a sacrificial oxide layer is formed thereon. The sacrificial oxide layer is removed. Thus, the exposed substrate has substantially no crystalline defects. A single crystalline semiconductor layer is then grown on the exposed substrate using SEG.