The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Feb. 11, 2002
Applicant:
Inventor:
Yasuki Yoshihisa, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1425 ;
Abstract
After introducing an impurity into a polysilicon semiconductor film formed on a substrate, heat treatment is carried out under the conditions not to activate the implanted impurity. The thickness of the polysilicon film and the sheet resistance after introducing the impurity are measured, and the conditions of forming the semiconductor film are adjusted so that the product of the thickness and the sheet resistance is always constant.
Yoshihisa, Yasuki. (2003). Method for manufacturing semiconductor device, and semiconductor device (U.S. Patent No. 6562704). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6562704
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile