The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Dec. 21, 2000
Ronald Dekker, Eindhoven, NL;
Henricus Godefridus Rafael Maas, Eindhoven, NL;
Cornelis Eustatius Timmering, Eindhoven, NL;
Pascal Henri Leon Bancken, Eindhoven, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A method of manufacturing a semiconductor device including semiconductor elements having semiconductor zones ( ) formed in a top layer ( ) of a silicon wafer ( ) situated on a buried insulating layer ( ). In this method, a first series of process steps are carried out, commonly referred to as front-end processing, wherein, inter alia, the silicon wafer is heated to temperatures above 700° C. Subsequently, trenches ( ) are formed in the top layer, which extend as far as the buried insulating layer and do not intersect pn-junctions. After said trenches have been filled with insulating material ( ), the semiconductor device is completed in a second series of process steps, commonly referred to as back-end processing, wherein the temperature of the wafer does not exceed 400° C. The trenches are filled in a deposition process wherein the wafer is heated to a temperature which does not exceed 500° C. In this manner, a semiconductor device can be made comprising semiconductor elements having very small and shallow semiconductor zones.