The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Mar. 22, 2002
Yoshiyuki Ando, Kunitachi-shi, Tokyo 186-0005, JP;
Other;
Abstract
A nondestructive read, two-device gain cell for a DRAM memory, based on conventional complementary metal oxide technology is disclosed. The charge is stored on the gate of a first MOSFET, with a second MOSFET connected to the gate for controlling the charge in accordance with an information bit. Depending on the stored charge, the surface under the gate of the first MOSFET is in a depletion or weak inversion condition. For both conditions, the first MOSFET is “off-state.” The first MOSFET causes a bipolar current flow when it is in a weak inversion condition, due to a “read” forward bias of the source to body junction. The bipolar current substantially depends on current gain, thereby multiplying the effective charge read from the first MOSFET.