The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Jan. 12, 2001
Hiromi Notani, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor integrated circuit includes: a first MOS transistor having one source/drain electrode for receiving a power supply voltage and the other source/drain electrode connected to a virtual power supply line; a second MOS transistor having one source/drain electrode connected to the virtual power supply line and the other source/drain electrode connected to a backgate power supply line; and a third MOS transistor having one source/drain electrode connected to the virtual power supply line and the backgate electrode connected to the backgate power supply line. When the first and second transistors are turned on, a voltage of the backgate electrode is forwardly biased to the one source/drain electrode in the third MOS transistor, thereby improving the operation speed of an internal circuit including the third MOS transistors in an active period.