The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Sep. 15, 2000
Matthias Uwe Lehr, Dresden, DE;
Albrecht Kieslich, Radebeul, DE;
Peter Thieme, Dresden, DE;
Lars Voland, Dresden, DE;
Infineon Technologies AG, München, DE;
Abstract
The semiconductor structure has a layer structure formed from a metalization layer and a dielectric layer. The metalization layer is patterned and has contact areas. The dielectric layer is composed of a depositable material and covers the metalization layer. The contact areas are formed from many contiguous individual structures, which are so narrow that the depositable material does not form, over the individual structures, any areas which run parallel to the metalization layer. The grid of contiguous individual structures forms a contact area which causes dielectric layer elevations which are particularly low and therefore easy to planarize.