The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Sep. 22, 1999
Applicant:
Inventor:
Masaaki Niwa, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, KP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ; H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/358 ; H01L 2/906 ;
Abstract
An MOS heterostructure includes: a single crystal silicon substrate; an insulating film formed on the substrate; and a conductive film formed on the insulating film. The substrate includes a plurality of terraces and steps, which have been formed as a result of rearrangement of silicon atoms on the surface of the substrate. Each of the step is located in a boundary between an adjacent pair of the terraces. The insulating film contains crystalline silicon dioxide that has grown epitaxially over the steps.