The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Apr. 22, 2002
Dain Curtis Miller, Roanoke, VA (US);
Inder J. Bahl, Roanoke, VA (US);
Edward L. Griffin, Roanoke, VA (US);
M/A-Com, Inc., Lowell, MA (US);
Abstract
A planar MESFET transistor includes a plurality of FET elements. Each FET element includes a doped planar channel, and source and drain coupled to the ends of the channel. A gate conductor extends over a portion of the channel at a location lying between the source and drain, a first predetermined distance from the drain. A field plate is connected to the gate conductor, and extends toward the drain a second predetermined distance, isolated from the channel except at its gate conductor connection by a dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile