The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Feb. 05, 2002
Applicant:
Inventors:
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/136 ;
Abstract
Method for manufacturing an SOI wafer. On a monocrystalline silicon wafer, forming protective regions having the shape of an overturned U, made of an oxidation resistant material, the protective regions covering first wafer portions. Forming deep trenches in the wafer which extend between, and laterally delimit the first wafer portions, completely oxidizing the first wafer portions except their upper areas which are covered by the protective regions, to form at least one continuous region of covered oxide overlaid by the non-oxidized upper portions. Removing the protective regions, and epitaxially growing a crystalline semiconductor material layer from the non-oxidized upper portions.