The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2003
Filed:
Mar. 29, 2000
Timothy Edward Boles, Tyngsboro, MA (US);
Joel Lee Goodrich, Westford, MA (US);
Thomas Robert Lally, North Reading, MA (US);
James Garfield Loring, Jr., Hudson, NH (US);
Tyco Electronics Corporation, Middletown, PA (US);
Abstract
A method of fabricating a hyperabrupt junction varactor diode structure comprises the steps of forming a non-uniformly doped n-type, hyperabrupt cathode region in a layer of semiconductor material and depositing, by ultra high vacuum chemical vapor deposition (UHVCVD), a p-type anode region onto a surface of the hyperabrupt cathode region. The deposition process is performed at relatively low temperature (i.e., below 600° C.). The anode region and the hyperabrupt cathode are joined at a junction between them such that an impurity concentration level of the hyperabrupt region increases in a direction toward the junction. During the forming step, n-type impurity ions are implanted at an implantation energy level substantially less than 300 keV, preferably between from about 10 to about 70 keV, with the implanted ions being thermally activated at a relatively low temperature (between from about 700 to about 800° C.).