The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Nov. 08, 2000
Federico Capasso, Westfield, NJ (US);
Alfred Yi Cho, Summit, NJ (US);
Sung-Nee George Chu, Murray Hill, NJ (US);
Claire F. Gmachl, New Providence, NJ (US);
Albert Lee Hutchinson, Columbus, GA (US);
Arthur Mike Sergent, New Providence, NJ (US);
Deborah Lee Sivco, Warren, NJ (US);
Alessandro Tredicucci, Chiavari, IT;
Michael Clement Wanke, Albuquerque, NM (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.