Nonvolatile semiconductor memory device and data input/output control method thereof

Abstract

A nonvolatile semiconductor memory device comprises an address buffer, a column address register, a selection circuit, a data input/output circuit, and a controller. The controller controls the column address changes of the memory device during the read/write operation. When external addresses are applied to a first input/output pins while data is transferred from a second input/output pins to an internal register or is transferred from the internal register to the second input/output pins through the data input/output circuit, the control circuit stores the external addresses in the column address register as a column address. A page size of the nonvolatile semiconductor memory device having such a column address change function can be increased irrespective of a memory system.