The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Apr. 25, 2000
Sining Mao, Savage, MN (US);
Zheng Gao, Minneapolis, MN (US);
Jian Chen, Minneapolis, MN (US);
Edward Stephens Murdock, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
The present invention comprises a magnetoresistive sensor including a cap layer, a free layer, a spacer layer, a pinned layer, an oxide layer, a pinning layer, a seed layer, and a substrate layer. The sensor consists of the cap layer adjacent the free layer. The free layer is adjacent to the spacer layer. The spacer layer is adjacent to the pinned layer. The pinned layer is adjacent to the oxide layer. The oxide layer is adjacent to the pinning layer. The pinning layer is adjacent to the seed layer and the seed layer is adjacent to the substrate. The present invention also comprises a method of manufacturing the magnetoresistive sensor including forming a layered structure. An electron specular scattering effect occurs at the oxide interface to achieve enhanced GMR responses while maintaining thermostability.