The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Jan. 20, 2000
Yih-Feng Chyan, Orlando, FL (US);
Chung Wai Leung, Orlando, FL (US);
Ranbir Singh, Orlando, FL (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
The present invention provides a bipolar transistor for use in increasing a speed of a flash memory cell having a source region and a drain region and first and second complementary tubs. In one embodiment, a base for the bipolar transistor is located in the first complementary tub. The first complementary tub functions as a collector for the bipolar transistor. The bipolar transistor base also uniquely functions as the source region. The bipolar transistor's emitter is also located in the first complementary tub and proximate the base. For example, the emitter may be located adjacent the base or actually located in the base. In an additional embodiment, the opposing bases and emitters are located on opposing sides of and proximate to the flash memory cell.