The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Sep. 27, 2000
Jack A. Mandelman, Stormville, NY (US);
Ulrike Gruening, Wappingers Falls, NY (US);
Alexander Michaelis, Wappingers Falls, NY (US);
Other;
Abstract
A semiconductor device formed by a method for aligning a strap diffusion, in accordance with the invention, includes the steps of providing a trench in a substrate, the trench having a storage node formed therein including a buried strap on top of the storage node, and depositing a dopant rich material on the buried strap. A trench top dielectric is formed on the dopant rich material, and portions of the dopant rich material are removed above the trench top dielectric. Dopants are outdiffused from the dopant rich material into an adjacent region of the substrate to form the strap diffusion by forming a gate in an upper portion of the trench such that the strap diffusion is operatively disposed relative to the gate.