The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Dec. 21, 1998
Applicant:
Inventors:
Leif C. Olsen, Plano, TX (US);
Leland S. Swanson, McKinney, TX (US);
Henry L. Edwards, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1304 ; H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1304 ; H01L 2/13065 ;
Abstract
Silicon carbide is used for a hardmask for the isolation dielectric etch and also serves as an etch stop for chemical-mechanical polishing. Alternatively, silicon carbonitride or silicon carboxide can be used.
Olsen, Leif. (2003). Silicon carbide as a stop layer in chemical mechanical polishing for isolation dielectric (U.S. Patent No. 6555476). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6555476
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile