The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Oct. 04, 2001
Young-Hoon Park, Kyonggi-do, KR;
Jin-Hun Lee, Kyonggi-do, KR;
Myoung-Hee Han, Kyonggi-do, KR;
Hyo-Dong Ban, Kyonggi-do, KR;
Eun-Young Min, Kyonggi-do, KR;
Won-Hee Jang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A contact forming method of a semiconductor device is disclosed, in which a pad polysilicon layer is formed at an active region of a cell array, thereafter an upper portion of a gate is opened when a spacer of a NMOS transistor region is formed. And at the same time a gate capping insulating layer of the cell array region, the active region of the NMOS transistor and the gate node contact region remains at a predetermined thickness by etching the spacer. And then, by performing an ion implantation procedure on the entire surface, the direct pad polysilicon layer and the buried pad polysilicon layer are simultaneously ion-implanted.