The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Oct. 19, 2000
Sreenath Unnikrishnan, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for fabricating a body contact silicon-on-insulator transistor ( ) includes forming a semiconductor substrate ( ) over an insulator ( ) and lightly doping the semiconductor substrate ( ) to form a body region ( ). The method also includes forming a gate ( ) over the semiconductor substrate ( ) and separated from the semiconductor substrate ( ) by a gate insulator layer ( ). The gate ( ) defines a source region ( ), a drain region ( ) and a contact region ( ). The method also includes masking a portion ( ) of the gate ( ) and the contact region ( ) and heavily doping the source region ( ), the drain region ( ) and an unmasked portion ( ) of the gate ( ) with a material having a conductivity substantially opposite a conductivity of the body region ( ).