The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Apr. 12, 2002
Tetsuya Hayashi, Tokyo, JP;
Toshifumi Takahashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In order to suppress generation of waste matter which results from removing a backside film formed by growing a film on both surfaces of a semiconductor substrate and thereby attain satisfactorily high yield and productivity, on a semiconductor substrate a polycrystalline silicon film is formed through double-sided growth, and only on the obverse surface of the semiconductor substrate a silicide film is formed thereon, and then those polycrystalline silicon film and silicide film are worked into shape to form gate electrodes After that, on the semiconductor substrate an insulating film for sidewall formation is formed to cover the gate electrodes through double-sided growth, and the insulating film for sidewall formation formed on the obverse surface of the semiconductor substrate is etched to form sidewall films. Only on the obverse surface side of the semiconductor substrate an interlayer insulating film is formed to cover the gate electrodes and thereafter the polycrystalline silicon film and the insulating film for sidewall formation, both of which are formed on the reverse surface side of the semiconductor substrate as well as a part of said semiconductor substrate in depth from the reverse surface are removed by grinding, whereby a semiconductor device is fabricated.