The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2003

Filed:

Dec. 18, 2001
Applicant:
Inventors:

Zhenan Bao, Jersey City, NJ (US);

Edwin Arthur Chandross, Murray Hill, NJ (US);

John A. Rodgers, New Providence, NJ (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 5/40 ; H01L 2/100 ; H01L 2/1336 ; H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 5/40 ; H01L 2/100 ; H01L 2/1336 ; H01L 2/18238 ;
Abstract

The specification describes thin film transistor (TFT) devices with source/drain contacts made by a metallo organic deposition (MOD) method wherein a metallo organic compound/metal particulate mixture is deposited to form a base pattern, and the base pattern is then plated with gold. The porous, relatively high resistance base pattern is thereby converted to a corrosion resistant, low resistance contact. The plating covers the sidewalls of the base pattern, thus allowing the final channel length to be less than the minimum design rule used for depositing the base pattern.


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