The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Jun. 18, 2001
Abstract
A method for growing a group-III nitride compound (including BN, AlN, GaN and InN) semiconductor film, to which much attention is currently paid in the field of optical semiconductors. If the internal pressure of a reactor increases, vertical growth becomes faster, and internal crystal defects are reduced while many fine pits are generated in view of outer appearance. If the internal pressure of a reactor decreases, vertical growth becomes slower and lateral growth becomes relatively faster, producing fewer pits in view of outer appearance, while internal crystal defects increase. Based on such experimental results, nitride crystals having many fine pits and fewer internal defects are first grown by a high pressure growth method and the fine pits relatively increased in number are then filled by a low pressure growth method, thereby attaining a high quality group-III nitride film.