The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2003

Filed:

Jun. 19, 2001
Applicant:
Inventors:

Thierry Duffar, Grenoble, FR;

Jean-Paul Garandet, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/504 ;
U.S. Cl.
CPC ...
C30B 2/504 ;
Abstract

A method for manufacturing a solid single crystal of an electrically conductive material by pulling from a molten mass of this material, the material presenting atom clusters at melt. The method includes: a melt stage so as to obtain a molten mass, the melt stage procuring a colder zone of the molten mass, from which the single crystal will be pulled, and a hotter zone having sufficient temperature to melt the atom clusters; a stage of application to the molten mass of a rotating magnetic field allowing the atom clusters to be displaced from the colder zone to the hotter zone; and a stage of growth by pulling of the single crystal after the atom clusters have been displaced from the colder zone to the hotter zone.


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