Prober for electrical measurement of potentials in the interior of ultra-fine semiconductor devices, and method of measuring electrical characteristics with said prober

Abstract

A prober for measuring electrical characteristics of a semiconductor device includes a contact device having a contactor with a sharp tip provided at a position close above the position of the semiconductor device at which the electrical characteristics are to be measured, a drive device for driving the contact device in the directions of the x-, y- and z-axes on the nm order, an x- and y-axis drive circuit that supplies drive current to the drive device for driving the contact device in the directions of the x- and y-axes, a signal supply device for supplying a signal between the surface of the semiconductor device and the contact device, a detection device for detecting the signal from the supply device and providing an output signal, a z-axis drive control circuit that supplies drive current to the drive device for driving the contact device in the z-axis direction by using the output signal from the detection device as a feedback input signal, a circuit for providing output to the z-axis drive control circuit of a signal that halts the driving of the contact device in the z-axis direction upon detection of an abnormal signal by the detection device, a switch that connects the contact device to the detection device, a controller that supplies signals for driving the contact device in the x-, y- and z-axis directions, preset tunneling current signals for the z-axis drive control circuit and preset voltage signals for variable DC bias voltage of the detection device, acquires and stores x, y and z positional information for the contact device along with voltage, current and potential information from the detection device, and performs image processing on the information, and a display device that displays the information and image information.