The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Oct. 31, 2001
Shu-Woei Chiou, Miaoli, TW;
Holin Chang, Kaohsiung, TW;
Tzer-Perng Chen, Hsinchu, TW;
Chih-Sung Chang, Taipei, TW;
United Epitaxy Company LTD, , TW;
Abstract
A light emitting diode (LED) is disclosed. An emitted light can be prevented from being absorbed by a substrate using a Bragg reflector layer with high reflectivity. The present invention provides a Bragg reflector layer comprising a plurality of high aluminum-containing AlGaAs/AlGaInP layers or high aluminum-containing AlGaAs/ low aluminum-containing AlGaInP layers formed on the substrate before the epitaxial structure of the light emitting diode being formed. Since the high aluminum-containing AlGaAs is oxidized and formed an oxide of a lower refraction index, the reflectivity and high reflection zones of the oxidized Bragg reflector layer are much larger. According to the electrical insulation characteristic of the oxide, the Bragg reflector layer can limit the current within the oxidized regions of high aluminum-containing AbGaAs layer. Therefore, the aforementioned light emitting diode structure has a higher brightness than the conventional light emitting diode.