The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Dec. 29, 2000
Grzegorz J. Pakulski, Woodlawn, CA;
Richard J. Finlay, Ottawa, CA;
Bookham Technology plc, Abingdon, GB;
Abstract
An improved method for etching a pattern in a semiconductor material is based on the formation of an InP grating mask on the semiconductor material. The formation of the InP grating mask involves the formation of a multi-layered structure on the semiconductor material with an etch-stop layer between two InP layers. A photoresist grating mask corresponding to the pattern to be etched in the semiconductor material is then formed on the top InP layer. Subsequently, a non-selective etch is used to penetrate the top InP layer, the etch-stop layer, and the lower InP layer. A suitable stripping solvent is then used to remove the photoresist followed by a selective etch to clear the remaining exposed InP material, remove contaminated material and to expose the underlying semiconductor material in accordance with the pattern to be etched. Additional masking beyond the InP mask is, therefore, not required. The exposed semiconductor material is then etched such that the pattern is transferred to the semiconductor material.