The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Oct. 25, 2001
Sung Gyu Pyo, Kyonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for forming a metal line of a semiconductor device is disclosed, in which a Cu thin film is deposited on a diffusion barrier film after a chemical enhancer and plasma are applied thereon, thereby improving fill characteristics of a contact hole having an ultra-fine structure. The method for forming a metal line in a semiconductor device includes the steps of forming an interlevel insulating film on a semiconductor substrate having a predetermined lower structure, forming a damascene pattern in the interlevel insulating film, forming a diffusion barrier film on a whole structure having the damascene pattern, applying a chemical enhancer on the diffusion barrier film to form a chemical enhancer film on the diffusion barrier film, performing plasma treatment, forming a Cu thin film on the whole structure to fill the damascene pattern, and performing a polishing process to expose an upper surface of the interlevel insulating film so that the Cu thin film only remains within the damascene pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile